Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

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    Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim
    By: Ezaki Tatsuya
    Publisher:
    World Scientific
    Print ISBN: 9789812568649, 9812568646
    eText ISBN: 9789812812056, 9812812059
    Copyright year: 2008
    Format: PDF
    Available from $ 171.00 USD
    SKU 9789812812056
    This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
     

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